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Mobile handset RF is composed of front-end model (FEM), transceiver and power amplifier. The core of FEM is aerial switch with low technology content, so this report mainly focused on the transceiver and power amplifier.
Transceiver is a key component of mobile handset. It is also a relatively independent component, so non-handset manufacturers can also find a place of their own in this field.
Global Market Share Distribution of Mobile Handset transceiver Manufacturers
QUALCOMM lists at No. 1 by the strength of its monopoly power in CDMA domain. In 2005, its shipment reached 182 million flakes and its CDMA transceiver shared over 80% of the market. In addition to CDMA mobile handset, QUALCOMM also produces transceivers aiming at CDMA/GSM. ST ranks at No. 2 by custom transceivers for Nokia, followed by Infineon who has Nokia, Panasonic, Siemens and BenQ as its clients. SILICON LAB is supported by Samsung and LG rely on its CNOS technologies. Except QUALCOMM, the platform-relying handset baseband manufacturers such as TI and Philips were not able to gain a good market share. Independent transceiver suppliers nevertheless shared 50% in the market.
SILICON LAB and Infineon are the earliest two transceiver manufacturers adopting CMOS techniques. Although the specifications of handset-purposed RF IC are extremely strict, however, the technical obstacles have been addressed.. After purchasing Berkana, QUALCOMM also adopts CMOS techniques in an extensive and intensive way. Some newly-founded RF manufacturers, without exception, all adopt RF CMOS techniques, even more advanced 65μm RF CMOS techniques. Old brands such as Philips, FREESCALE, ST and RENESAS maintained traditional technologies, which is mainly SiGe BiCMOS techniques. Nokia still massively draws upon ST RF transceivers. This suggests that some large handset manufacturers are still hold tentative attitude towards RF CMOS whereas Chinese manufacturers, Samsung and LG are more willing to accept new things.
In the infancy of 3G, multi-mode handsets are in great popularity. Lowly-integrated transceivers usually need four or five pieces of IC, which have negative influence on design sophistication, adjusting, size and power consumption. Therefore, RF CMOS has a good prospect. Yet it still needs observing. Nokia's mass application of RF CMOS transceivers can be the signal to judge RF CMOS maturity.
Power amplifier needs special techniques. GaAs semiconductor still keeps absolutely mainstream position in the field of handset-purposed power amplifiers. Power amplifiers influence handsets' signal, voice quality and power consumption to a great extent. Handset manufacturers are very careful in choosing power amplifiers. They will not adopt other techniques without 4-5 years' trial. SiGe develops smoothly in the domain of Bluetooth, WLAN and GPS but will have no further development in the handset field.
The power amplifier industry is even more particular, with all the manufacturers being independent and seldom exploiting products relevant to mobile handsets. The reason is that GaAs is too special for silicon wafer manufacturers to acquaint in a short term.
Global Market Share Distribution of Handset-purposed Power Amplifiers in 2005
RFMD ranks at the first globally. It has the six largest handset manufacturers worldwide as its clients and supplies power amplifiers to over 80% of Nokia's mobile handsets. SKYWORKS lists at No.2 globally with LG, Lenovo and Samsung as its key clients. Amoi and Siemens are key clients of Renesas and it is also the supplier of Nokia's partial low-price handsets. PHILIPS has Samsung and Bird as its main clients and FREESCALE has MOTO and Bird.
For customer who purchased this report can have a free list of Semiconductor component configuration of 100 mobile handset models launched in Chinese market, 90% of the models been selected were launched in 2005, some of them are still waiting to be launched.
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Mobile handset RF is composed of front-end model (FEM), transceiver and power amplifier. The core of FEM is aerial switch with low technology content, so this report mainly focused on the transceiver and power amplifier.
Transceiver is a key component of mobile handset. It is also a relatively independent component, so non-handset manufacturers can also find a place of their own in this field.
Global Market Share Distribution of Mobile Handset transceiver Manufacturers
QUALCOMM lists at No. 1 by the strength of its monopoly power in CDMA domain. In 2005, its shipment reached 182 million flakes and its CDMA transceiver shared over 80% of the market. In addition to CDMA mobile handset, QUALCOMM also produces transceivers aiming at CDMA/GSM. ST ranks at No. 2 by custom transceivers for Nokia, followed by Infineon who has Nokia, Panasonic, Siemens and BenQ as its clients. SILICON LAB is supported by Samsung and LG rely on its CNOS technologies. Except QUALCOMM, the platform-relying handset baseband manufacturers such as TI and Philips were not able to gain a good market share. Independent transceiver suppliers nevertheless shared 50% in the market.
SILICON LAB and Infineon are the earliest two transceiver manufacturers adopting CMOS techniques. Although the specifications of handset-purposed RF IC are extremely strict, however, the technical obstacles have been addressed.. After purchasing Berkana, QUALCOMM also adopts CMOS techniques in an extensive and intensive way. Some newly-founded RF manufacturers, without exception, all adopt RF CMOS techniques, even more advanced 65μm RF CMOS techniques. Old brands such as Philips, FREESCALE, ST and RENESAS maintained traditional technologies, which is mainly SiGe BiCMOS techniques. Nokia still massively draws upon ST RF transceivers. This suggests that some large handset manufacturers are still hold tentative attitude towards RF CMOS whereas Chinese manufacturers, Samsung and LG are more willing to accept new things.
In the infancy of 3G, multi-mode handsets are in great popularity. Lowly-integrated transceivers usually need four or five pieces of IC, which have negative influence on design sophistication, adjusting, size and power consumption. Therefore, RF CMOS has a good prospect. Yet it still needs observing. Nokia's mass application of RF CMOS transceivers can be the signal to judge RF CMOS maturity.
Power amplifier needs special techniques. GaAs semiconductor still keeps absolutely mainstream position in the field of handset-purposed power amplifiers. Power amplifiers influence handsets' signal, voice quality and power consumption to a great extent. Handset manufacturers are very careful in choosing power amplifiers. They will not adopt other techniques without 4-5 years' trial. SiGe develops smoothly in the domain of Bluetooth, WLAN and GPS but will have no further development in the handset field.
The power amplifier industry is even more particular, with all the manufacturers being independent and seldom exploiting products relevant to mobile handsets. The reason is that GaAs is too special for silicon wafer manufacturers to acquaint in a short term.
Global Market Share Distribution of Handset-purposed Power Amplifiers in 2005
RFMD ranks at the first globally. It has the six largest handset manufacturers worldwide as its clients and supplies power amplifiers to over 80% of Nokia's mobile handsets. SKYWORKS lists at No.2 globally with LG, Lenovo and Samsung as its key clients. Amoi and Siemens are key clients of Renesas and it is also the supplier of Nokia's partial low-price handsets. PHILIPS has Samsung and Bird as its main clients and FREESCALE has MOTO and Bird.
For customer who purchased this report can have a free list of Semiconductor component configuration of 100 mobile handset models launched in Chinese market, 90% of the models been selected were launched in 2005, some of them are still waiting to be launched.
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2005-2006 www.researchinchina.com All Rights Reserved |
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1. Fundamentals of RF Semiconductor 1.1 RF Circuit Structure 1.2 RF Semiconductor Techniques 1.2.1 GaAs 1.2.2 SiGe 1.2.3 RF CMOS 1.2.4 Ultracmos 1.2.5 Si BiCMOS 1.3 RF Semiconductor in 3G Era 1.4 Polar Modulation 1.4.1 Fundamentals of Polar Modulation 1.4.2 Status Quo of Polar Modulation 1.5 DigRF2. Overview of Global Handset RF Semiconductor Market 3. Global Handset RF Semiconductor Manufacturers 3.1 SKYWORKS 3.2 ST 3.3 INFINEON 3.4 Silicon Lab 3.5 RFMD 3.6 TI 3.7 PHILIPS 3.8 FREESCALE 3.9 AVAGO 3.10 QUALCOMM 3.11 ANADIGICS 3.12 TRIQUINT 3.13 MAXIM 3.14 Sirific Wireless 3.15 Sequoia Communications 3.16 Tropian 3.17 RENESAS 3.18 SiGe Semiconductor 3.19 WIN Semiconductor 3.20 Advanced Wireless Semiconductor Company (AWSC) 3.21 MC Devices (Shenzhen) 3.22 Airoha Technology Corp. 3.23 Beijing LHWT Microelectronics Inc. 3.24 Epic Communications, Inc. (Epicom) 3.25 Yuantonix, Inc. 3.26 Comlent Technology, Inc. (Comlent) 3.27 Rising Micro-Electronics Co., Ltd. (RME) 3.28 RDA Microelectronics 3.29 Hangzhou Sicom RF Technology, Inc. 3.30 Shanghai Tsinghuachip |
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2005-2006 www.researchinchina.com All Rights Reserved |
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Framework of Typical Wireless Terminal Equipment RF Technological Diagram of Typical Wireless Communication Equipment Terminal RF components Framework of Super-heterodyne Framework of Homodyne Framework and Typical Application Diagram of Harley Framework of Weaver Comparison between MOCVD and MBE Comparison among HBT, PHEMT and MESFET Technologies Analytical Comparison of Signal Frequency Spectrum between 2.5G/2.75G and 3G Market Share of Global Handset-purposed Power Amplifiers, 2005 Market Share of China's Handset-purposed Power Amplifiers, 2005 Market Share of Global Handset-purposed Transceivers, 2005 Market Share of China's Handset-purposed Transceivers, 2005 Revenue Statistics of SKYWORKS, FY2002-2005 Gross Profit of SKYWORKS, FY2002-2005 Quarterly Product Structure Proportion of SKYWORKS, 2005 List of SKYWORKS CDMA RF Sub-system Products Inner Framework of CX74107 Inner Framework of CX77328 HELIOS DIGRF RF System Framework HELIOS EDGE RF Sub-system Framework HELIOS MINI EDGE RF Sub-system Framework HELIOS II EDGE RF Sub-system Framework Inner Framework of RS23603 Revenue Structure of ST, 2005 Revenue Statistics of ST, 2003Q1-2005Q4 ST's Revenue from Mobile Communications, 2003Q1-2005Q4 Revenue Proportion of ST by regions, 2005 New Structure of ST Regional Distribution of ST 6-inch Wafer Output Departmental Revenue Statistics of INFINEON, 2003-2005 Regional Revenue Statistics of INFINEON, 2003-2005 Departmental Profit Statistics of INFINEON, 2003-2005 Inner Framework of PMB6272 Inner Framework of SMARTi 3G Inner Framework of PMB6277 Inner Framework of PMB6271 Inner Framework of PMB6270 Revenue and Gross Profit Rate of Silicon Lab, 2001-2005 Inner Framework of SI4206 Inner Framework of SI4212 Figure: Inner Framework of SI4905 Inner Framework of SI4205 Revenue and Gross Profit Margin of RFMD, FY 2001-2005Q3 Product Structure Diagram, FY 2005 Inner Framework of POLARIS Inner Framework of BRF6100/6150 Application Framework of BRF6150 Departmental Revenue Proportion of Philips, 2005 Income of Philips Semiconductor in Eight Consecutive Quarters Gross Profit of Philips Semiconductor in Eight Consecutive Quarters Product Application Proportion of Philips Semiconductor, 2005 Regional Revenue Proportion of Philips Semiconductor, 2005 Inner Framework of UAA3587 Inner Framework of BGY284E Inner Framework of UAA3582 Revenue of FREESCALE, 2003-2005 Regional Revenue Proportion of GREESCALE, 2005 Quarterly Income and Gross Profit Margin of FREESCALE Wireless and Mobile Sector, 2005 Inner Framework of MMM6000 GSM/GPRS Quad-band Transceivers MMM6007 WCDMA Triple-band Transceivers Framework of FREESCALE WCDMA/EDGE RF System Framework of FREESCALE GSM/GPRS/EDGE RF System Framework of FREESCALE GSM/GPRS RF System Inner Framework of WS1102 Inner Framework of ACPM-7881 Inner Framework of RTR6300 Inner Framework of RFR6000 Inner Framework of RFL6000 Inner Framework of RFR6250 Inner Framework of RTR6250 Inner Framework ofRTR6275 Market and Products of ANADIGICS Key Clients of ANADIGICS Income and Gross Profit Margin of ANADIGICS in Five Consecutive Quarters Main Partners of ANADIGICS Handset Application Cases of ANADIGICS Products Sales Revenue Structure of ANADIGICS Wide-band Products, 2003-2005 Sales Revenue Structure of ANADIGICS Wireless Products, 2003-2005 ANADIGICS WCDMA/GSM Power Amplifiers ANADIGICS Product Roadmap Revenue and Gross Profit Margin of TRIQUINT, 2001-2005 Downstream Application Proportion of TRIQUINT Products, 2005 Regional Distribution of TRIQUINT Product Revenue, 2005 Revenue and Gross Profit Rate Changes of Maxim, 2001-2005 Global Regional Revenue Proportion of Maxim, 2005 MAXIM TD-SCDMA RF System Module Program MAXIM CDMA2000 Dual-band RF Solution Module Program MAXIM CDMA2000 Single-band RF Solution Module Program MAXIM WCDMA RF Solution Module Program Inner Framework of SW2210 Inner Framework of SW3200 Inner Framework of SW3210 GaAs Wafer Foundry Productivity Changes of WIN Semiconductor HBT Technology Roadmap of WIN Semiconductor HEMT Technology Roadmap of WIN Semiconductor Product Cycle Time of WIN Semiconductor Technology Roadmap of AWSC Business Performance of AWSC, 2003-2005H1 Revenue Ratio of AWSC, 2003-2005H1 Share Holders of Airoha Development Roadmap of Airoha Handset RF Products Development Roadmap of Airoha WLAN RF Chip Products Performance Comparison among Si BJT, SiGe HBT, RF CMOS, Bi CMOS, MES FET, PHEMT and GaAs HBT Manufacturing Techniques and Components for Different RF Systems RF Comparison among 2.5G, 2.75G and 3G RF Frequency Comparison among 2.5G, 2.75G and 3G RF System Requirement Comparison between 2.5G/2.75G and 3G The Four Production Bases of SKYWORKS Transceiver Products of INFINEON Transceiver Products of Silicon Lab Brief Introduction to MC13777/MC13712 Brief Introduction to MMM6010/6011/6025 RF Power Amplifier Products of AVAGO Handset Transceiver Products of QUALCOMM WCDMA Power Amplifier Products of ANADIGICS Power Amplifier Products of TriQuint Technical Features of WIN Semiconductor Transistors> IC Products of MC Devices Airoha Products LHWT Microelectronic Products Epicom Products Yuantonix Handset-purposed Wireless Power Amplifier Products Comlent Semiconductor Products RME Microelectronic Products RDA Products Sicom Products
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