Samsung Electronics has issued a statement disclosing plans to set up a flash memory chip plant in China.

Samsung said it has applied with the Korea government to establish a semiconductor production line overseas. While waiting for approval, Samsung will conduct discussions with the China government on the possibility of building a NAND flash wafer plant dedicated to producing products at 20nm and below.

Samsung expects to kick off construction of the China plant in 2012, and commence production at the facility in 2013.

Samsung in September announced a new memory semiconductor fabrication facility, Line-16, at its Nano City Complex in Hwaseong had commenced operations. The facility houses production lines for DRAM, NAND and next-generation memory products.

Samsung also remarked previously it started making 20nm-class NAND flash in September, and would move forward to 10nm process technology in 2012. 

Source:digitimes