MOSFET transistors or field-effect transistor is a kind of transistors based on common electrostatic field effect.

Along with diodes and transistors of the general application, field-effect transistors are one of the most demanded elements in modern electronics. Nowadays MOSFET are widely applied in pulse power supply working on high frequencies of transformation (100kH and more). Due to extremely stiff competition and existing requirements to the equipment power efficiency, engineers aspire to reduce dimensions, power consumption and the end product cost price. Owing to these factors, the manufacturer of MOSFET transistors Silan Microelectronics, which distributor is NEON-EK, Ltd., has to develop and offer more new products and technologies. One of them is new crystal generation allowing to make SVF series transistors produced on their own patented technology F-cellTM with record-breaking low reverse transfer capacity (Crss). In the table there is shown a comparison of widespread transistors from International Rectifier and Silan Microelectronics.

• Input capacity Ciss (CGS) determines switch on delay time (td on) and partially switch off delay time (td off);

• Output capacity Coss (CDS) determines duration of pulse trailing edge in MOSFET drain-source channel.

• Reverse Transfer Capacitance Crss (CDG) influences rise (tr) and fall time ( tf) of voltage in MOSFET drain-source channel and even more it influences noise transfer into transistor operating input circuit.

As it is shown in table, Silan transistors are not inferior to International Rectifier parts, and even better by some parameters. One of them is the cost that is considerably lower of the competitor’s prices.