Small-power IGBT of Zhonghuan Semiconductor Realized Mass Production and High-power IGCB Expected to Put into Production in 2012

   Date:2012-03-06     Source:

By October of 2011, 1200V IGBT of Zhonghuan Semiconductor has realized mass production, 3300V IGBT also has realized small batch production while high-power IGBT has been under R &D.

 

R & D Status of Zhonghuan Semiconductor’s IGBT Products

Product

Trait

Status

Note

1200V

Trech

Realized mass production

Independent Develop

1700V

Trech

Realized mass production

Independent Develop

3300V

Planar

Realized small batch production

Cooperate with world leading power device R & D team

4500V

Planar

Under R & D

Cooperate with world leading power device R & D team

6500V

Planar

Under R & D

Cooperate with world leading power device R & D team

 
Zhonghuan Semiconductor presented its 3300V/10A IGBT sample for the first time on the new product release conference in February of 2011; currently, the production is in sample production phase and the samples would be delivered to major customers for certification, and is expected to realize sale in 2012.
 
Meanwhile, 1200V IGBT maturity has improved gradually with output of 1,000 pieces -2,000 pieces per month, which is mainly applied in induction cooker market. The yield rate of the wafer has improved to be more than 80%, the product is expected to further enter into home appliance, electric welder, UPS and other fields with the products becoming more and more mature.

Zhonghuan Semiconductor started the development of 4500V IGBT and 6500V IGBT in 2011, and which are scheduled to put into production in 2012. 

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